PART |
Description |
Maker |
2DC2412R-7 2DC2412R |
50V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
|
Vishay Siliconix Diodes
|
CDD2395F CDD2395 |
2.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 60 - 320 hFE. TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 3A I(C) | TO-220AB
|
Continental Device India Limited
|
DTC124TC DTA124TC DTA1D3RE DTC1D3RE DTA114WC DTC11 |
TRANSISTOR | 50V V(BR)CEO | 30MA I(C) | SOT-23 TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-92VAR TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | TO-92VAR TRANSISTOR | SIP 晶体管| 50V五(巴西)总裁| 100mA的一c)| SOT - 23封装 TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | SIP 晶体管| 50V五(巴西)总裁| 500mA的一(c)|园区 TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23VAR 晶体管| 50V五(巴西)总裁| 100mA的一c)|的SOT - 23VAR TRANSISTOR | 50V V(BR)CEO | 70MA I(C) | SOT-23 晶体管| 50V五(巴西)总裁|提供70mA一(c)| SOT - 23封装 TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23 晶体管| 50V五(巴西)总裁| 100mA的一(c)| SOT - 23封装 TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP 晶体管| 50V五(巴西)总裁| 100mA的一(c)|园区 TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23VAR 晶体管| 50V五(巴西)总裁| 100mA的一(c)|的SOT - 23VAR
|
FCI Analog Devices, Inc. Rohm Co., Ltd. TE Connectivity, Ltd. Diodes, Inc. Kingbright, Corp.
|
CMBA847G CMBA847E CMBA847F |
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 400 - 800 hFE. 0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 250 - 500 hFE. 0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 150 - 300 hFE. TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SOT-23
|
Continental Device India Limited
|
IRF7103Q IRF7103QTR IRF7103QN |
N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 50V V(BR)DSS | 3A I(D) | SO Power MOSFET(Vdss=50V) 50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package 50V Single DUAL-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
2SB826 2SB826R |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 12A I(C) | TO-220AB POWER TRANSISTORS(12A,50V,40W)
|
MOSPEC SEMICONDUCTOR CORP. MOSPEC[Mospec Semiconductor]
|
2N1122 2N1405 2N1407 2N1101 2N1140 2N1535 2N1472 2 |
TRANSISTOR | BJT | PNP | 11V V(BR)CEO | 50MA I(C) | TO-24 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 50MA I(C) | TO-12 TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-22 TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 100MA I(C) | TO-9 TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3.5A I(C) | IST-3RT-1/2 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 50MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 50A I(C) | TO-36 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 7.5A I(C) | TO-82 TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 7.5A I(C) | TO-82 TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 12A I(C) | TO-3 TRANSISTOR | BJT | PNP | 110V V(BR)CEO | TO-5 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 50MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 100MA I(C) | TO-5 TRANSISTOR | BJT | NPN | 25MA I(C) | TO-22VAR TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 25A I(C) | TO-36 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | PNP | 90V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 7A I(C) | TO-3 晶体管|晶体管|进步党| 50V五(巴西)总裁| 7A条一(c)| 5-Pin, Multiple-Input, Programmable Reset ICs 晶体管|晶体管|进步党| 12V的五(巴西)总裁| 100mA的一(c)| 5-Pin, Multiple-Input, Programmable Reset ICs 晶体管|晶体管|进步党| 65V的五(巴西)总裁|5A一(c)|6 TRANSISTOR | BJT | PNP | 15A I(C) | TO-36 TRANSISTOR | BJT | PNP | 38V V(BR)CEO | 15A I(C) | TO-41
|
NXP Semiconductors N.V. Microsemi, Corp.
|
2SB892 2SD1207 2SB892S 2SD1207S 2SD1207T |
Low-Power, SC70/SOT µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay 晶体管|晶体管|叩| 50V五(巴西)总裁|甲一(c)|2VAR TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 2A I(C) | TO-92VAR TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 2A I(C) | TO-92VAR Large-Current Switching Applications
|
SANYO[Sanyo Semicon Device]
|
151-05 151-08 151-07 151-09 152-05 164-18 164-04 1 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 6A I(C) | TO-82 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 10A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 6A I(C) | TO-82 晶体管|晶体管|叩| 100V的五(巴西)总裁|甲一c)| STR-5/16 晶体管|晶体管|叩| 180V五(巴西)总裁|甲一c)| STR-5/16 晶体管|晶体管| npn型| 140伏特五(巴西)总裁|甲一c)| STR-5/16 晶体管|晶体管|叩| 50V五(巴西)总裁| 6A条一c)|2 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 100V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 60V的五(巴西)总裁|甲一c)| STR-5/16 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 50V五(巴西)总裁|甲一(c)| STR-5/16 TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 70V的五(巴西)总裁|甲一(c)| STR-5/16
|
Samsung Semiconductor Co., Ltd. Molex, Inc. Intel, Corp.
|
DDTA114ECA DDTA115ECA DDTA123ECA DDTA124ECA DDTA14 |
CAP .0082UF 50V PPS FILM 1206 5% PNP PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR 进步党预偏置信号小的SOT - 23表面贴装晶体 CAP .22UF 50V PPS FILM ECH-S
|
DIODES[Diodes Incorporated] Diodes, Inc. Diodes Inc.
|
DTA123YCA DTA123YCAT116 |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
|
ROHM
|
ITC1100 |
1000 WATT, 50V, Pulsed Avionics 1030 MHz Common base bipolar transistor 1000 WATT, 50V, Pulsed
|
List of Unclassifed Manufacturers ETC GHz Technology
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